NTMS4807N
TYPICAL PERFORMANCE CURVES
35
30
5V
4.5 V
4V
T J = 25 ° C
3.5 V
30
25
V DS ≥ 10 V
25
20
20
15
3.3 V
15
10
3.1 V
10
T J = 100 ° C
5
2.5 V
2.7 V
2.9 V
5
T J = 25 ° C
T J = -55 ° C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
0.0425
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
0.02
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.0375
0.0325
0.0275
0.0225
0.0175
0.0125
0.0075
T J = 25 ° C
I D = 12.2 A
0.0175
0.015
0.0125
0.01
0.0075
0.005
0.0025
T J = 25 ° C
V GS = 4 V
V GS = 10 V
0.0025
2
4
6
8
10
0
5
10
15
20
25
30
1.6
1.4
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
I D = 12.2 A
V GS = 10 V
1000000
I D, DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
V GS = 0 V
1.2
1.0
0.8
100000
10000
1000
T J = 150 ° C
T J = 100 ° C
0.6
-50
-25
0
25
50
75
100
125
150
100
3
6
9
12
15
18
21
24
27
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On-Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
相关PDF资料
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相关代理商/技术参数
NTMS4816N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11 A, N-Channel, SO-8
NTMS4816NR2G 功能描述:MOSFET NFET SO8 30V 11A NCH 0.030R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4840N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 7.5 A, Single N−Channel, SOIC−8
NTMS4840NR2G 功能描述:MOSFET NFET SO8 30V 30A 24MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4872N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.2 A, N−Channel, SO−8
NTMS4872NR2G 功能描述:MOSFET NFET SO8 30V 10.2A 13.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMS4873NF 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11.5 A, N−Channel, SO−8
NTMS4873NFR2G 功能描述:MOSFET NFET SO8 30V 11.7A 12MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube